производитель | номер детали | датащи | подробное описание детали |
Cypress Semiconductor
|
CY7C129 |
243Kb/8P |
RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata |
Samsung semiconductor
|
K7R163684B |
418Kb/18P |
512Kx36 & 1Mx18 QDR II b4 SRAM |
K7S3236U4C |
444Kb/20P |
1Mx36 & 2Mx18 QDR II+ b4 SRAM |
K7R643684M |
451Kb/19P |
2Mx36 & 4Mx18 QDR II b4 SRAM |
K7S1636T4C |
382Kb/20P |
512Kx36 & 1Mx18 QDR II+ b4 SRAM |
K7S1636U4C |
381Kb/20P |
512Kx36 & 1Mx18 QDR II+ b4 SRAM |
K7S3236T4C |
445Kb/20P |
1Mx36 & 2Mx18 QDR II+ b4 SRAM |
K7R323682C |
458Kb/20P |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM |
Integrated Device Techn...
|
IDT70P3307 |
882Kb/20P |
1024K/512K x18 SYNCHRONOUS DUAL QDR-II |
Samsung semiconductor
|
K7R323684C |
463Kb/20P |
1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM |
Integrated Device Techn...
|
IDT70P3537 |
873Kb/20P |
512K/256K x36 SYNCHRONOUS DUAL QDR-II |
Samsung semiconductor
|
K7R643682M |
461Kb/20P |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM |
Renesas Technology Corp
|
R1Q2A4436RBG |
937Kb/30P |
144-Mbit QDR??II SRAM 2-word Burst |
Cypress Semiconductor
|
CY7C15632KV18 |
808Kb/30P |
72-Mbit QDR II+ SRAM Four-Word Burst |
Renesas Technology Corp
|
RMQS2A3636DGBA |
888Kb/30P |
36-Mbit QDR??II SRAM 2-word Burst |
R1QAA3636CBB |
307Kb/38P |
36-Mbit QDR II+ SRAM 4-word Burst |
Integrated Device Techn...
|
IDT71P74204 |
578Kb/22P |
18Mb Pipelined QDR II SRAM Burst of 4 |
Renesas Technology Corp
|
R1QGA3636CBB |
307Kb/38P |
36-Mbit QDR II+ SRAM 4-word Burst |
R1Q3A4436RBG |
960Kb/30P |
144-Mbit QDR??II SRAM 4-word Burst |
RMQS3A3636DGBA |
860Kb/30P |
36-Mbit QDR??II SRAM 4-word Burst |