производитель | номер детали | датащи | подробное описание детали |
SHENZHEN DOINGTER SEMIC...
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40N15L-TA3-T |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
50N06L-TA3-T |
1Mb/3P |
N-Channel MOSFET uses advanced trench technology |
60N06L-TF3-T |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
DKI10751 |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
H7N0608FM |
1Mb/4P |
N-Channel MOSFET uses advanced trench technology |
HAT1036R |
1Mb/5P |
P-Channel MOSFET uses advanced trench technology |
HAT1131R |
1Mb/4P |
P-Channel MOSFET uses advanced trench technology |
HAT2033R |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
HFD2N65S |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
JCS50N06RH-O-R-N-B |
887Kb/4P |
N-Channel MOSFET uses advanced trench technology |
MTB1D7N03J3 |
1Mb/7P |
N-Channel MOSFET uses advanced SGT technology |
MTB090N06J3 |
674Kb/5P |
N-Channel MOSFET uses advanced trench technology |
MTD07N04E3 |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
PE4294S |
577Kb/4P |
N-Channel MOSFET uses advanced SGT technology |
PE6020K |
2Mb/5P |
N-Channel MOSFET uses advanced trench technology |
QM0004D |
2Mb/4P |
N-Channel MOSFET uses advanced trench technology |
QM04N65D |
1Mb/5P |
N-Channel MOSFET uses advanced trench technology |
QM3002F |
1Mb/4P |
N-Channel MOSFET uses advanced trench technology |
QM3006S |
1Mb/4P |
N-Channel MOSFET uses advanced trench technology |
QM3014S |
1Mb/4P |
N-Channel MOSFET uses advanced trench technology |