BARRIER Datasheet(PDF) - BAT15-02EL - Infineon Technologies AG

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	BAT15-02EL	1Mb/16P	Low barrier type for DBS mixer applications
	BAT63	889Kb/9P	Low barrier diode for detectors up to GHz frequencies 2011-06-15
	BAT6203WE6327	1Mb/18P	Low barrier diode for detectors up to GHz frequencies 2011-06-15
	BAT62	1Mb/19P	Low barrier diode for detectors up to GHz frequencies 2014-02-13
	IDH09G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH10G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW10G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDW20G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH06G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH08G65C5	1Mb/13P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH16G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW30G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH03G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH05G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW40G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH04G65C5	1Mb/13P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH20G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW16G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDW12G65C5	1Mb/11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IKZA50N65RH5	1Mb/15P	TRENCHSTOPTM 5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM Schottky barrier diode V2.1 2020-07-27

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