| производитель | номер детали | датащи | подробное описание детали |
Toshiba Semiconductor
|
2SC1628 |
145Kb/4P |
SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) |
| 2SC1569 |
244Kb/2P |
SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS) |
| 2SB1018A |
170Kb/5P |
Silicon NPN Triple Diffused Type (PCT Process) |
| 2SC2230A |
133Kb/5P |
Silicon NPN Triple Diffused Type (PCT Process) |
| 2SC2714 |
1Mb/8P |
Silicon NPN Epitaxial Planar Type (PCT process) |
| TB67S149HG |
908Kb/24P |
Toshiba BiCD Process Integrated Circuit Silicon Monolithic
2014-04-15 |
| TB67S521FTAG |
521Kb/23P |
Toshiba BiCD Process Integrated Circuit Silicon Monolithic
2016-12-13 |
| TB67H420FTG |
476Kb/23P |
Toshiba BiCD process integrated circuit silicon monolithic
2020-10-16 |
| TB67H450AFNG |
390Kb/20P |
TOSHIBA BiCD Process Integrated Circuit Silicon Monolithic
2020-12-17 |
| TB67S142FTG |
995Kb/27P |
Toshiba BiCD Process Integrated Circuit Silicon Monolithic
2014-04-14 |
| TB67S149AFTG |
577Kb/27P |
Toshiba BiCD Process Integrated Circuit Silicon Monolithic
2020-12-15 |
| TB67S149FG |
824Kb/23P |
Toshiba BiCD Process Integrated Circuit Silicon Monolithic
2015-06-15 |
| TB67S285FTG |
982Kb/28P |
Toshiba BiCD process integrated circuit silicon monolithic
2022-01-17 |
| RN2907 |
188Kb/5P |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2108 |
177Kb/6P |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2910 |
177Kb/6P |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN6001 |
90Kb/3P |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| HN4B101J |
244Kb/6P |
Transistor Silicon PNP / NPN Epitaxial Type (PCT Process) |
| 2SA1618-GR |
214Kb/4P |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
| 2SC1815L-GR |
256Kb/4P |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) |
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