производитель | номер детали | датащи | подробное описание детали |
Fairchild Semiconductor
|
SSP4N80AS |
192Kb/7P |
Avalanche Rugged Technology |
IRFU120ATU |
258Kb/7P |
Avalanche Rugged Technology |
IRFM120ATF |
274Kb/7P |
Avalanche Rugged Technology |
SFR9220TF |
259Kb/7P |
Avalanche Rugged Technology |
SFU9120TU |
234Kb/7P |
Avalanche Rugged Technology |
IRFR130ATM |
263Kb/7P |
Avalanche Rugged Technology |
IRFW530ATM |
261Kb/7P |
Avalanche Rugged Technology |
SFR9024TF |
236Kb/7P |
Avalanche Rugged Technology |
IRLU110ATU |
246Kb/9P |
Avalanche Rugged Technology |
IRFR120ATM |
258Kb/7P |
Avalanche Rugged Technology |
SFR9224TF |
268Kb/7P |
Avalanche Rugged Technology |
FGH30N120FTDTU |
588Kb/9P |
Field stop trench technology |
IRFS640A |
325Kb/7P |
Rugged Gate Oxide Technology |
AN-5059 |
500Kb/6P |
LVDS Technology Solves Typical EMI Problems Associated |
FAN302HLMY_F117 |
1Mb/18P |
PWM Controller for Low Standby Power Battery-Charger Applications ??mWSaver??Technology |
FAN302HLMY |
1Mb/18P |
PWM Controller for Low Standby Power Battery- Charger Applications ??mWSaver??Technology |
FDD3860 |
335Kb/6P |
N-Channel PowerTrench MOSFET 100V, 29A, High performance trench technology for extremely low |
AN-6099 |
1Mb/11P |
New PowerTrench MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications |
FDPF10N60NZ |
439Kb/10P |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild?셲 proprietary, planar stripe, DMOS technology. |
FQD6N50C |
687Kb/9P |
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary planar stripe, DMOS technology |